d a t a sh eet product speci?cation supersedes data of 1998 dec 04 1999 jan 26 discrete semiconductors psma8.5a to psma78a transient voltage suppressor diodes handbook, halfpage m3d168
1999 jan 26 2 philips semiconductors product speci?cation transient voltage suppressor diodes psma8.5a to psma78a features glass passivated high maximum operating temperature low leakage current excellent stability ul 94v-o classified plastic package transient suppressor stand-off voltage range: 8.5 to 78 v for 26 types supplied in 12 mm embossed tape. description do-214ac surface mountable package with glass passivated chip. the well-defined void-free case is of a transfer-moulded thermo-setting plastic. fig.1 simplified outline (do-214ac; sod106) and symbol. handbook, 4 columns msa473 cathode band top view side view ka limiting values in accordance with the absolute maximum rating system (iec 134). symbol parameter conditions value unit p rsm non-repetitive peak reverse power dissipation 10/1000 m s exponential pulse; t j =25 c prior to surge; see figs.3 and 5 400 w
1999 jan 26 3 philips semiconductors product speci?cation transient voltage suppressor diodes psma8.5a to psma78a electrical characteristics total series t j =25 c unless otherwise specified. per type t j =25 c unless otherwise specified. symbol parameter conditions min. max. unit v f forward voltage i f = 0.5 a - 1.2 v t stg storage temperature - 65 +175 c t j junction temperature - 65 +175 c device (note 1 ) reverse stand-off voltage breakdown voltage reverse voltage (max) @i rsm (clamping voltage) reverse surge current (max) reverse leakage current (max) @v rwm v rwm (v) v br min. (v) i t (ma) v rsm (v) i rsm (a) i r ( m a) psma8.5a 8.5 9.44 1 14.4 27.8 5.0 psma9.0a 9.0 10.0 1 15.4 26.0 2.5 psma10a 10 11.1 1 17.0 23.5 2.5 psma11a 11 12.2 1 18.2 22.0 2.5 psma12a 12 13.3 1 19.9 20.1 2.5 psma13a 13 14.4 1 21.5 18.6 2.5 psma14a 14 15.6 1 23.2 17.2 2.5 psma15a 15 16.7 1 24.4 16.4 2.5 psma16a 16 17.8 1 26.0 15.4 2.5 psma17a 17 18.9 1 27.6 14.5 2.5 psma18a 18 20.0 1 29.2 13.7 2.5 psma20a 20 22.2 1 32.4 12.3 2.5 psma22a 22 24.4 1 35.5 11.3 2.5 psma24a 24 26.7 1 38.9 10.3 2.5 psma26a 26 28.9 1 42.1 9.5 2.5 psma28a 28 31.1 1 45.4 8.8 2.5 psma30a 30 33.3 1 48.4 8.3 2.5 psma33a 33 36.7 1 53.3 7.5 2.5
1999 jan 26 4 philips semiconductors product speci?cation transient voltage suppressor diodes psma8.5a to psma78a note 1. tolerance and voltage designation: tolerance designation - the type number listed indicates a tolerance of . 5% thermal characteristics notes 1. device mounted on an al 2 o 3 printed-circuit board, 0.7 mm thick; thickness of cu-layer 3 35 m m, see fig.4. 2. device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of cu-layer 3 40 m m, see fig.4. for more information please refer to the general part of the associated handbook . psma36a 36 40.0 1 58.1 6.9 2.5 psma40a 40 44.4 1 64.5 6.2 2.5 psma43a 43 47.8 1 69.4 5.8 2.5 psma45a 45 50.0 1 72.2 5.5 2.5 psma48a 48 53.3 1 77.4 5.2 2.5 psma51a 51 56.7 1 82.4 4.9 2.5 psma54a 54 60.0 1 87.1 4.6 2.5 psma58a 58 64.4 1 93.6 4.3 2.5 psma60a 60 66.7 1 96.8 4.1 2.5 psma64a 64 71.1 1 103.0 3.9 2.5 psma70a 70 77.8 1 113.0 3.5 2.5 psma75a 75 83.3 1 121.0 3.3 2.5 psma78a 78 86.7 1 126.0 3.2 2.5 symbol parameter conditions value unit r th j-tp thermal resistance from junction to tie-point 25 k/w r th j-a thermal resistance from junction to ambient note 1 100 k/w note 2 150 k/w device (note 1 ) reverse stand-off voltage breakdown voltage reverse voltage (max) @i rsm (clamping voltage) reverse surge current (max) reverse leakage current (max) @v rwm v rwm (v) v br min. (v) i t (ma) v rsm (v) i rsm (a) i r ( m a)
1999 jan 26 5 philips semiconductors product speci?cation transient voltage suppressor diodes psma8.5a to psma78a graphical data fig.2 maximum total power dissipation as a function of temperature. solid line: tie-point temperature. dotted line: ambient temperature; device mounted on an al 2 o 3 printed-circuit board as shown in fig.4. handbook, halfpage 0 200 4 0 2 1 3 mgr463 p tot (w) 100 t ( c) t j =25 c prior to surge. fig.3 maximum non-repetitive peak reverse power dissipation as a function of pulse duration (exponential pulse). handbook, halfpage 10 - 2 10 2 10 3 10 4 10 - 1 1 t 2 (ms) p rsm (w) 10 mgr465 fig.4 printed-circuit board for surface mounting. dimensions in mm. msb213 4.5 2.5 1.25 50 50 handbook, halfpage mgd521 i rsm (%) 100 90 50 10 t 1 t 2 t fig.5 non-repetitive peak reverse current pulse definition. in accordance with iec 60-1, section 8 . t 1 =10 m s. t 2 = 1000 m s.
1999 jan 26 6 philips semiconductors product speci?cation transient voltage suppressor diodes psma8.5a to psma78a package outline references outline version european projection issue date iec jedec eiaj sod106 97-06-09 do-214ac 0 2.5 5 mm scale transfer-moulded thermo-setting plastic small rectangular surface mounted package; 2 connectors sod106 unit b a 1 cd e q mm 1.6 1.4 0.2 0.05 2.8 2.4 4.5 4.3 h 5.5 5.1 3.3 2.7 dimensions (mm are the original dimensions) a 2.3 2.0 d h a e b (1) a 1 q c note 1. the marking band indicates the cathode.
1999 jan 26 7 philips semiconductors product speci?cation transient voltage suppressor diodes psma8.5a to psma78a definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.
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philips semiconductors, piazza iv novembre 3, 20124 milano, tel. +39 2 6752 2531, fax. +39 2 6752 2557 japan: philips bldg 13-37, kohnan 2-chome, minato-ku, tokyo 108-8507, tel. +81 3 3740 5130, fax. +81 3 3740 5077 korea: philips house, 260-199 itaewon-dong, yongsan-ku, seoul, tel. +82 2 709 1412, fax. +82 2 709 1415 malaysia: no. 76 jalan universiti, 46200 petaling jaya, selangor, tel. +60 3 750 5214, fax. +60 3 757 4880 mexico: 5900 gateway east, suite 200, el paso, texas 79905, tel. +9-5 800 234 7381, fax +9-5 800 943 0087 printed in the netherlands 135002/00/02/pp8 date of release: 1999 jan 26 document order number: 9397 750 05028
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